The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Dec. 28, 2022
Applicant:

Winbond Electronics Corp., Taichung City, TW;

Inventors:

Ping-Lung Yu, Hsinchu City, TW;

PO-Chun Shao, Hsinchu City, TW;

Chu-Chun Hsieh, Taichung City, TW;

Assignee:

Winbond Electronics Corp., Taichung City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10W 20/051 (2026.01); H10W 20/056 (2026.01); H10W 20/425 (2026.01);
Abstract

A method for forming a semiconductor structure includes providing a substrate with an opening in or on the substrate. The method further includes conformally forming a barrier layer in the opening and on the substrate and performing an implantation process to implant a dopant into the barrier layer. The method further includes conformally forming a capping layer on the barrier layer and performing an annealing process, such that the dopant diffuses into the grain boundary of the barrier layer. The method further includes removing the capping layer and filling the opening with a conductive material.


Find Patent Forward Citations

Yu, Ping-Lung. (2026). Doping barrier layer to facilitate metal fill with large grain size (U.S. Patent No. 12660581). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660581

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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