The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Jun. 20, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kang Huang, Hsinchu, TW;

Deng-Ming Juo, Tainan City, TW;

Wan-Chun Pan, Hsinchu, TW;

Shich-Chang Suen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/43 (2025.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10P 14/692 (2026.01); H10P 95/00 (2026.01);
U.S. Cl.
CPC ...
H10D 30/43 (2025.01); H10D 30/014 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10P 14/69215 (2026.01); H10P 14/69392 (2026.01); H10P 95/064 (2026.01);
Abstract

Provided are semiconductor devices and methods for fabricating such devices. An exemplary method includes forming fin structures separated by an isolation material; depositing a high-k material over the fin structures and isolation material, wherein the high-k material includes lower portions located between fin structures and an upper portion located above the fin structures; depositing a topography-improving capping layer over the high-k material; performing a chemical mechanical planarization (CMP) process to remove the capping layer and the upper portion of the high-k material and to define high-k insulation segments.


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