The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

May. 10, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kazumasa Igarashi, Yamanashi, JP;

Jun Ogawa, Yamanashi, JP;

Yuki Tanaka, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 21/3115 (2006.01); H01L 21/67 (2006.01); H10P 14/60 (2026.01); H10P 32/20 (2026.01); H10P 72/00 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6518 (2026.01); H01J 37/32449 (2013.01); H10P 14/6532 (2026.01); H10P 32/20 (2026.01); H10P 72/0402 (2026.01); H10P 72/0434 (2026.01); H01J 2237/2001 (2013.01); H01J 2237/338 (2013.01);
Abstract

A substrate processing method includes housing, in a processing container, a substrate having an insulating film on a surface of the substrate; exposing the insulating film to plasma generated from a gas including deuterium gas in a state where the substrate housed in the processing container is maintained at a first temperature, to introduce deuterium into the insulating film; and heat-treating the insulating film without exposing the insulating film to the plasma in a state where the substrate housed in the processing container is controlled to be at a second temperature that is different from the first temperature, to adjust concentration of the deuterium introduced into the insulating film.


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