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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12660524 B1

PDFFull Text
Date of Patent:
Jun. 16, 2026

Filed:

Feb. 17, 2022

Method of manufacturing semiconductor device, method of processing substrate, recording medium, and substrate processing apparatus

Applicant:

Kokusai Electric Corporation, Tokyo, JP;

Inventors:

Tatsushi Ueda, Toyama, JP;

Masanori Nakayama, Toyama, JP;

Katsunori Funaki, Toyama, JP;

Yasutoshi Tsubota, Toyama, JP;

Hiroto Igawa, Toyama, JP;

Yuki Yamakado, Toyama, JP;

Hiroki Kishimoto, Toyama, JP;

Yuichiro Takeshima, Toyama, JP;

Keita Ichimura, Toyama, JP;

Assignee:

KOKUSAI ELECTRIC CORPORATION, Tokyo, JP;

Attorney:

Volpe Koenig

Primary Examiner:

Zandra V Smith

Assistant Examiner:

Andre C Stevenson

Int. Cl.
CPC ...
H10P 14/60 (2026.01); C23C 8/10 (2006.01); C23C 8/36 (2006.01); H01J 37/32 (2006.01); H10P 14/692 (2026.01);
U.S. Cl.
CPC ...
H10P 14/6319 (2026.01); C23C 8/10 (2013.01); C23C 8/36 (2013.01); H01J 37/32449 (2013.01); H10P 14/6308 (2026.01); H10P 14/69215 (2026.01); H10P 14/6927 (2026.01); H01J 2237/338 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes: (a) generating a reactive species by plasma-exciting a process gas containing oxygen and hydrogen; and (b) supplying the reactive species to a substrate and oxidizing surfaces of a silicon film and a silicon nitride film formed to be exposed respectively on the substrate, wherein a ratio of oxygen and hydrogen contained in the process gas is adjusted such that a ratio of a thickness of a second oxide layer formed by oxidizing the surface of the silicon nitride film to a thickness of a first oxide layer formed by oxidizing the surface of the silicon film in (b) becomes a predetermined thickness ratio.

Find Patent Forward Citations

Ueda, Tatsushi. (2026). Method of manufacturing semiconductor device, method of processing substrate, recording medium, and substrate processing apparatus (U.S. Patent No. 12660524). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660524

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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