The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Jun. 16, 2022
International Business Machines Corporation, Armonk, NY (US);
Julien Frougier, Albany, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Min Gyu Sung, Latham, NY (US);
Heng Wu, Santa Clara, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An approach that provides a method for forming a semiconductor structure with a gate jumper. The semiconductor structure includes a source/drain contact for a semiconductor device and a dielectric cap on a top portion of the source/drain contact. The semiconductor structure includes two gates adjacent to the source/drain contact. The semiconductor structure includes a gate jumper that connects the two gates adjacent to the source/drain contact. The gate jumper surrounds the dielectric cap on the top portion of the source/drain contact. In other embodiments, the gate jumper is over two or more dielectric caps on two or more source/drain contacts and the gate jumper connects three or more adjacent gates that surround a bottom portion of each of the two or more source/drain contacts.