The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Jun. 16, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Ta-Chun Lin, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/306 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10P 50/64 (2026.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10P 50/644 (2026.01);
Abstract

A method for fabricating a semiconductor device is disclosed. The method includes forming, over a substrate, a stack extending along a first lateral direction, wherein the stack includes a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately arranged on top of one another; overlaying a first portion of the stack with a first gate structure, wherein the first gate structure extends along a second lateral direction perpendicular to the first lateral direction; removing a second portion of the stack through a first etching process, wherein the second portion was disposed next to the first portion along the first lateral direction; and removing a third portion of the stack through a second etching process, wherein the third portion was disposed next to a lower part of the second portion.


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