Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes first semiconductor channel layers, second semiconductor channel layers, a dielectric wall, a gate structure, a source/drain electrode and an inner spacer. The first semiconductor channel layers are stacked vertically apart along a first direction over a substrate. The second semiconductor channel layers are stacked vertically apart along the first direction over the substrate. The dielectric wall is disposed between and separates the first semiconductor channel layers and the second first semiconductor channel layers, wherein the dielectric wall comprises a liner and a dielectric wall material disposed over the liner. The gate structure extends along a second direction perpendicular to the first direction disposed crossing over a channel region of the first fin structure and a channel region of the second fin structure. The source/drain electrode is in contact with the first semiconductor channel layers. The inner spacer is enclosed by the first semiconductor channel layers, the gate structure, the dielectric wall and the source/drain electrode, wherein the inner spacer is in contact with the dielectric wall material of the dielectric wall.