The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Jul. 29, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventor:

Hung-Chang Yu, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 11/15 (2006.01); H10B 61/00 (2023.01); H10B 63/00 (2023.01); H10D 84/00 (2025.01);
U.S. Cl.
CPC ...
H10B 61/20 (2023.02); G11C 11/15 (2013.01); G11C 11/161 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); H10B 61/00 (2023.02); H10B 63/32 (2023.02); H10D 84/206 (2025.01);
Abstract

A semiconductor device includes: a memory array; a modulation circuit including a first resistive element, a second resistive element and a third resistive element; a regulator including a transistor; and a controller configured to: determine an operation mode of the memory array; generate a first regulated voltage at a drain terminal of the transistor, wherein the first regulated voltage corresponds to a positive temperature coefficient, a negative temperature coefficient or a zero temperature coefficient according to a first resistance ratio between the first resistive element and the second resistive element and a second resistance ratio between the second resistive element and the third resistive element; provide a first access voltage to the memory array in response to the first regulated voltage corresponding to the positive temperature coefficient; and provide a second access voltage to the memory array in response to the first regulated voltage corresponding to the negative temperature coefficient.


Find Patent Forward Citations

Yu, Hung-Chang. (2026). Circuit and method to enhance efficiency of memory (U.S. Patent No. 12660202). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660202

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…