The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Oct. 11, 2023
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Chanro Park, Clifton Park, NY (US);
Min Gyu Sung, Latham, NY (US);
Julien Frougier, Albany, NY (US);
Juntao Li, Cohoes, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A SRAM is provided that includes a first pull-up transistor having a first channel length, and a first pull-down transistor located adjacent to the first pull-up transistor and having a second channel length, wherein the second channel length is greater than the first channel length. The structure further includes a first backside contact structure contacting a first n-doped source/drain region of the first pull-down transistor, wherein the first backside contact structure has a first critical dimension that is constant throughout an entirety thereof, and a second backside contact structure having a vertical portion and a base portion. The vertical portion of the second backside contact structure directly contacts a first p-doped source/drain region of the first pull-up transistor and the base portion of the second backside contact structure has a second critical dimension that is greater than the first critical dimension.