Method of manufacturing semiconductor device, substrate processing method, non-transitory computer-readable recording medium and substrate processing apparatus

Abstract

The present disclosure provides a method of manufacturing a semiconductor device, including: (a) loading a substrate with a film formed on a surface thereof into a process vessel; (b) generating a reactive species containing oxygen and a reactive species of a rare gas by converting a mixed gas containing the rare gas and an oxygen-containing gas into a plasma state; and (c) oxidizing the film by supplying the reactive species containing oxygen to the substrate together with the reactive species of the rare gas. In (b), a partial pressure ratio P/P, which is a ratio of a partial pressure Pof the rare gas in the process vessel to a total pressure Pof the mixed gas in the process vessel, is set to a value of 0.4 or less.