The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Mar. 31, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kenji Yamazoe, San Jose, CA (US);
Ping-Chieh Wu, Zhubei City, TW;
Hoi-Tou Ng, Hsinchu, TW;
Kenneth Lik Kin Ho, Redwood City, CA (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
In a pattern formation method for a semiconductor device fabrication, an original pattern for manufacturing a photomask is acquired, a modified original pattern is obtained by performing an optical proximity correction on the original pattern, a sub-resolution assist feature (SRAF) seed map with respect to the modified original pattern indicating locations where an image quality is improved by an SRAF pattern is obtained, SRAF patterns are placed around the original pattern, the SRAF patterns and the modified original pattern are output as mask data, and the photo mask is manufactured using the mask data.