The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Nov. 20, 2020
Applicant:

Enkris Semiconductor, Inc., Suzhou, CN;

Inventor:

Liyang Zhang, Suzhou, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/83 (2025.01); H10H 20/00 (2025.01); H10H 20/831 (2025.01); H10H 20/85 (2025.01); H10H 20/856 (2025.01); H10H 20/857 (2025.01); H10H 29/14 (2025.01); H10W 90/00 (2026.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01); H10H 20/832 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8312 (2025.01); H10H 20/856 (2025.01); H10H 20/857 (2025.01); H10H 29/14 (2025.01); H10W 90/00 (2026.01); H10H 20/032 (2025.01); H10H 20/0364 (2025.01); H10H 20/825 (2025.01); H10H 20/835 (2025.01);
Abstract

The present application provides a semiconductor device and a manufacturing method thereof. The manufacturing method of the semiconductor device includes: first forming a first conductive layer on a substrate, where the first conductive layer includes a heavily-doped group III-V compound, then forming an isolation structure on the first conductive layer, then growing a light-emitting structure by using the isolation structure as a mask, where the light-emitting structure includes a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked on the first conductive layer, and a conductivity type of the first semiconductor layer is opposite to a conductivity type of the second semiconductor layer.


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