The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Mar. 11, 2022
Intel Corporation, Santa Clara, CA (US);
Leonard P. Guler, Hillsboro, OR (US);
Tsuan-Chung Chang, Portland, OR (US);
Charles H. Wallace, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Desalegne B. Teweldebrhan, Sherwood, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Spacer self-aligned via structures for gate contact or trench contact are described. In an example, an integrated circuit structure includes a plurality of gate structures above a substrate. A plurality of conductive trench contact structures is alternating with the plurality of gate structures. A corresponding one of a plurality of dielectric spacers is between adjacent ones of the plurality of gate structures and the plurality of conductive trench contact structures. The plurality of dielectric spacers protrudes above the plurality of gate structures and above the plurality of conductive trench contact structures. A conductive structure is in direct contact with one of the plurality of gate structures or with one of the plurality of conductive trench contact structures. The conductive structure has a flat edge along a direction across the one of the plurality of gate structures or the one of the plurality of conductive trench contact structures.