The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Mar. 15, 2024
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Yuto Kosaka, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32165 (2013.01); H01J 37/32091 (2013.01); H01J 37/32183 (2013.01); H01J 2237/327 (2013.01);
Abstract

In a plasma processing apparatus, electrical bias energy is provided from a bias power supply to a substrate support. Source radio-frequency power is provided from a radio-frequency power supply to a radio-frequency electrode. The radio-frequency power supply selects, from a plurality of frequency groups, an initial frequency group corresponding to a specified process. The radio-frequency power supply uses, in a first period, a plurality of frequencies included in the initial frequency group as a plurality of source frequencies of the source radio-frequency power for a respective plurality of phase periods in a waveform cycle of the electrical bias energy. The radio-frequency power supply adjusts, in a second period, the plurality of source frequencies of the source radio-frequency power for the respective plurality of phase periods in a waveform cycle of the electrical bias energy.


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Kosaka, Yuto. (2026). Plasma processing apparatus, power supply system, control method, program, and storage medium (U.S. Patent No. 12651725). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12651725

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