The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Jan. 23, 2023
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Seongryul Choi, Seongnam, KR;

Joan Rey Villarba Buot, Escondido, CA (US);

Kuiwon Kang, San Diego, CA (US);

Zhijie Wang, San Diego, CA (US);

Assignee:

QUALCOMM INCORPORATED, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 70/65 (2026.01); H10P 14/46 (2026.01); H10W 20/00 (2026.01); H10W 90/00 (2026.01); H10W 72/00 (2026.01); H10W 72/20 (2026.01); H10W 72/29 (2026.01); H10W 72/90 (2026.01); H10W 80/00 (2026.01);
U.S. Cl.
CPC ...
H10W 70/65 (2026.01); H10P 14/46 (2026.01); H10W 20/074 (2026.01); H10W 72/07254 (2026.01); H10W 90/701 (2026.01); H10W 72/07252 (2026.01); H10W 72/07554 (2026.01); H10W 72/221 (2026.01); H10W 72/242 (2026.01); H10W 72/29 (2026.01); H10W 72/9415 (2026.01); H10W 80/743 (2026.01); H10W 90/724 (2026.01); H10W 90/754 (2026.01); H10W 90/794 (2026.01);
Abstract

Embedded trace substrates (ETS) having an ETS metallization layer with T-shaped interconnects with reduced-width embedded metal traces, and related integrated circuit (IC) packages and fabrication methods. The ETS includes an outer ETS metallization layer that includes T-shaped interconnects for supporting input/output (I/O) connections between the ETS and another opposing package substrate. To increase density of I/O interconnections, the pitch of the embedded metal traces in the ETS metallization layer is reduced. The T-shaped interconnects also each include an additional metal contact pad that is coupled to a respective embedded metal trace to increase the height of the embedded metal trace to eliminate a vertical connection gap between the ETS and an opposing package substrate. In the T-shape interconnects, their embedded metal traces are reduced in width in a horizontal direction(s) as compared to their respective metal contact pads to provide room for additional metal traces for additional signal routing capacity.


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