The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Jul. 24, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Wei-Cheng Tzeng, Taipei City, TW;
Shih-Wei Peng, Hsinchu City, TW;
Chun-Yen Lin, Hsinchu City, TW;
Wei-Cheng Lin, Taichung City, TW;
Jiann-Tyng Tzeng, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An integrated circuit is provided, including a first transistor of a first conductivity type comprising first and second active regions, a second transistor of a second conductivity type comprising third and fourth active regions and arranged under the first transistor along a first direction, a first gate structure extending in the first direction and shared by the first and second transistors, an isolation layer sandwiched between the first and second transistors and extending along a second direction to pass through the first gate structure, and a connection layer surrounded by the isolation layer and extending along the second direction to pass through the first gate structure. The isolation layer has a first surface contacting the first and second active regions and a second surface contacting the third and fourth active regions. The connection layer comprises first and second portions are electrically coupled to the first and fourth active regions.