The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2026

Filed:

Feb. 20, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Daisuke Oba, Nirasaki City, JP;

Nobuo Matsuki, Nirasaki City, JP;

Yoshinori Morisada, Nirasaki City, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/60 (2026.01); C23C 16/52 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
H10P 14/6532 (2026.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H10P 14/6336 (2026.01); H10P 14/6684 (2026.01); H10P 14/6687 (2026.01);
Abstract

A method of forming an insulating film includes supplying a precursor gas to a substrate to generate a fluidic oligomer by plasma polymerization and deposit the fluidic oligomer on the substrate, performing a plasma process on the substrate after the depositing the fluidic oligomer, so that at least a part of the fluidic oligomer is hydrogen-terminated while maintaining fluidity of the fluidic oligomer, and subsequently performing an annealing process, which includes a plasma process, on the substrate to form the insulating film.


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Oba, Daisuke. (2026). Method for forming insulating film, and substrate processing system (U.S. Patent No. 12648374). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12648374

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