The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Jun. 13, 2023
Mitsubishi Electric Corporation, Tokyo, JP;
Yusuke Miyata, Tokyo, JP;
Kenji Suzuki, Tokyo, JP;
Yuki Haraguchi, Tokyo, JP;
Haruhiko Minamitake, Tokyo, JP;
Taiki Hoshi, Tokyo, JP;
Hidenori Koketsu, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Provided is a semiconductor device and a method of manufacturing a semiconductor device in which deterioration of energy loss is suppressed. The semiconductor device includes: a drift layer of a first conductivity type provided between a first main surface and a second main surface of a semiconductor substrate; and a field stop layer of the first conductivity type having an impurity concentration higher than that of the drift layer and provided between the drift layer and the second main surface. A net carrier concentration profile at room temperature of the field stop layer have at least one peak from the second main surface toward the first main surface. A hydrogen atom concentration profile of the field stop layer have at least two peaks from the second main surface toward the first main surface. The hydrogen atom concentration profile has more peaks than the net carrier concentration profile.