Methods of fabricating memory devices including capacitors

Abstract

Methods for fabricating memory devices including capacitors are disclosed. In one aspect, a method of fabricating a memory device including capacitors is described, where each capacitor includes a first electrode and a second electrode separated by an isolation layer. The method includes providing a first wafer including a sacrificial material and the first electrodes disposed in first holes and in contact with the sacrificial material, hybrid bonding the first wafer with a second wafer including a complementary metal-oxide-semiconductor (CMOS) device, removing the sacrificial material to expose the first electrodes, depositing the isolation layer on the first electrodes, and forming the second electrodes on the isolation layer.