The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
May. 02, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chien-Wei Wang, Hsinchu County, TW;
Wei-Che Lin, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/16 (2006.01); H10P 72/78 (2026.01);
U.S. Cl.
CPC ...
G03F 7/707 (2013.01); G03F 7/162 (2013.01); G03F 7/70783 (2013.01); H10P 72/78 (2026.01);
Abstract
A method of photoresist spin coating process comprises the following steps. A substrate is placed on a chuck using vacuum force or gravitational force. A photoresist chemical is spin coated over the substrate. The chuck comprises a base portion and a buffer portion. The base portion is made of an inorganic material. The buffer portion overlaps the base portion. The buffer portion is more deformable than the base portion, and the buffer portion is made of an organic composite including a polymer and a non-Newtonian fluid.