The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Mar. 10, 2023
Applicant:

Semiconductor Components Industries, Llc, Scottsdale, AZ (US);

Inventors:

Jie Chang, Suzhou, CN;

Xiaoying Yuan, Suzhou, CN;

Keunhyuk Lee, Suzhou, CN;

Jerome Teysseyre, Scottsdale, AZ (US);

Leo Gu, Suzhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49575 (2013.01); H01L 21/56 (2013.01); H01L 23/3107 (2013.01); H01L 23/49503 (2013.01); H01L 25/072 (2013.01); H01L 25/50 (2013.01); H01L 23/49562 (2013.01);
Abstract

Implementations of high-power semiconductor device modules are described, including automotive power transistor assemblies for use in power amplifier circuits such as a cascode circuit. In some implementations, power amplifier circuit components are provided on separate semiconductor die attached to discrete dual die attach pads. A separation between the die attach pads, as well as a through-hole, provide sufficient isolation between the die to permit operation of the circuit at high voltages without relying on a thick multi-layer direct bond copper (DBC) isolation structure. In some implementations, higher voltage operation can be supported by a thin multi-layer, resin coated copper DAP in which the top layer is split.


Find Patent Forward Citations

Loading…