The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Jun. 20, 2022
Applicant:

Jenoptik Optical Systems Gmbh, Jena, DE;

Inventors:

Meik Panitz, Jena, DE;

Lutz Raupach, Jena, DE;

Martin Tilke, Jena, DE;

Sabine Zybell, Jena, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 76/40 (2026.01); H10P 50/00 (2026.01); H10P 50/24 (2026.01); H10P 76/20 (2026.01);
U.S. Cl.
CPC ...
H10P 76/4085 (2026.01); H10P 50/242 (2026.01); H10P 50/692 (2026.01); H10P 50/695 (2026.01); H10P 76/204 (2026.01); H10P 76/405 (2026.01);
Abstract

A method of producing an etching mask. A substrate is provided, a metal layer is applied, the metal layer comprises or is formed from at least one transition metal and/or aluminum. A masking layer is applied and the masking layer is structured. The metal layer is exposed in at least one processing region. The substrate is coated with a tetrel layer including at least partially a tetrel, wherein an interdiffusion zone between the transition metal or aluminum and the tetrel is formed in the processing region at an interface between the metal layer and the tetrel layer. The masking layer is removed and the metal layer s selectively etched. The substrate is exposed in at least one etching region other than the processing region, and the metal layer is at least partially maintained in the processing region.


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