The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Jun. 01, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chao-Chun Wang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method of forming a semiconductor device includes forming an electronic component over a substrate; forming a first insulating layer over the electronic component; forming a contact plug extending through the first insulating layer to the electronic component, wherein the contact plug includes a first portion formed of a conductive material and a second portion formed of an oxide of the conductive material disposed over the first portion; performing a treatment to expose the contact plug and the first insulating layer to a gas mixture of Nand NH; after performing the treatment, forming a second insulating layer over the contact plug and the first insulating layer; and forming an interconnect in the second insulating layer and in contact with the contact plug.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile