The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

May. 05, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Supriya Ghosh, San Jose, CA (US);

Susmit Singha Roy, Sunnyvale, CA (US);

Abhijit Basu Mallick, Fremont, CA (US);

Shuchi Sunil Ojha, Sunnyvale, CA (US);

Praket Prakash Jha, San Jose, CA (US);

Rui Cheng, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10P 50/28 (2026.01); H01J 37/32 (2006.01); H10P 14/69 (2026.01);
U.S. Cl.
CPC ...
H10P 50/283 (2026.01); H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 37/32844 (2013.01); H10P 14/6902 (2026.01); H01J 2237/182 (2013.01); H01J 2237/2001 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01);
Abstract

Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate.


Find Patent Forward Citations

Loading…