The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Aug. 15, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Christopher Michael Netzband, Albany, NY (US);

Nathan IP, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 10/00 (2026.01); H10P 72/78 (2026.01); H10P 74/20 (2026.01); H10P 95/90 (2026.01);
U.S. Cl.
CPC ...
H10P 10/128 (2026.01); H10P 72/78 (2026.01); H10P 74/203 (2026.01); H10P 95/906 (2026.01);
Abstract

An embodiment method includes determining an upper vacuum condition, a lower vacuum condition, a bonding gap distance, and a striker pressure condition based on measuring residual distortions from a previously bonded wafer. The method includes applying the upper vacuum condition to an upper wafer using an upper wafer holder, the upper vacuum condition applied to a backside of the upper wafer, and the upper wafer having a front side being opposite of the backside. The method includes applying the lower vacuum condition to a lower wafer using a lower wafer holder. The method includes positioning the front side of the upper wafer over the front side of the lower wafer to create the bonding gap distance between the upper wafer and the lower wafer and striking the backside of the upper wafer with a striker using the striker pressure condition to bond the front side of the upper wafer and the front side of the lower wafer together.


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