The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2026

Filed:

Nov. 18, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Koichi Motoyama, Clifton Park, NY (US);

Nicholas Alexander Polomoff, Hopewell Junction, NY (US);

Leon Sigal, Monsey, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6757 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01);
Abstract

Embodiments herein include semiconductor structures that may include a first field-effect transistor (FET) comprising a first source/drain (S/D), a second FET comprising a second S/D squarely above the first S/D, and a shared S/D contact. The shared S/D may include a recessed portion between the first S/D and the second S/D, a side portion above the recessed portion, and a top portion above the second S/D. The side portion may contact a lateral side of the second S/D.


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