The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Jun. 13, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor structure includes depositing a dummy material stack over a fin, patterning a top portion of the dummy material stack in a first etching process, patterning a middle portion of the dummy material stack in a second etching process, patterning a bottom portion of the dummy material stack in a third etching process to form a dummy gate stack, and replacing the dummy gate stack with a metal gate stack. The second etching process is weaker than the first etching process, and the third etching process is weaker than the second etching process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile