Three-dimensional memory devices and fabricating methods thereof

Abstract

Three-dimensional (3D) memory devices and fabricating methods are disclosed. A disclosed 3D memory device includes a first semiconductor structure. The first semiconductor structure includes an array of first type through stack structures in a first region of a memory stack, an array of second type through stack structures in a second region of the memory stack, a semiconductor layer including a first portion on the array of first type through stack structures and a second portion on the array of second type through stack structures, multiple vias each penetrating the semiconductor layer and in contact with a corresponding one of the first type through stack structures or the array of second type through stack structures, and a slit structure separating the array of first type through stack structures from the array of second type through stack structures, and separating the first portion of the semiconductor layer from the second portion of the semiconductor layer.