The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
May. 16, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ya-Lun Chen, Hsinchu, TW;
Ching-Yu Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Disclosed methods employ acid generator components in an underlayer. Acid generated by the acid generator components diffuses into an overlying layer, e.g., a photoresist layer, and provides acid which chemically alters the photoresist, e.g., alters the solubility of the photoresist in a developer solution. The acid that diffuses into the overlying photoresist layer increases the concentration and the uniformity of concentration of the acid in lower portions of the photoresist. The regions of increased acid concentration within the photoresist can increase the photoresists solubility in developer solutions, thereby reducing inadequate development of the photoresist. Reducing inadequate development of the photoresist can reduce the amount of photoresist residue or scum that remains after development is complete.