The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2026
Filed:
Jul. 06, 2023
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Lior Huli, Albany, NY (US);
Eric Chih-Fang Liu, Niskayuna, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/11 (2006.01); G03F 7/20 (2006.01); H10P 50/00 (2026.01); H10P 76/40 (2026.01); H10P 95/00 (2026.01);
U.S. Cl.
CPC ...
G03F 7/11 (2013.01); G03F 7/2004 (2013.01); H10P 50/71 (2026.01); H10P 50/73 (2026.01); H10P 76/4085 (2026.01); H10P 95/08 (2026.01);
Abstract
A method of microfabrication includes forming a sacrificial layer over a film. A resist layer is formed over the sacrificial layer. The resist layer includes an extreme ultraviolet (EUV) resist. A pattern is formed in the resist layer by an EUV exposure and a wet etch followed by rinsing and drying, resulting in uncovered portions of the sacrificial layer. The uncovered portions of the sacrificial layer are treated. The pattern is transferred from the resist layer to the film by performing an etch process.