The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Jun. 21, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Takahiro Yonezawa, Kurokawa-gun, JP;

Kenta Ono, Kurokawa-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 50/00 (2026.01); H10P 50/28 (2026.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H10P 50/73 (2026.01); H10P 50/283 (2026.01); H01J 37/32082 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01);
Abstract

Provided is a plasma processing method performed with a plasma processing apparatus including a chamber. The method includes: (a) preparing a substrate on a substrate support in the chamber, the substrate including an etching target film and a metal-containing film disposed on the etching target film, the metal-containing film including a side face defining at least one opening on the etching target film; (b) forming a deposited film on at least a portion of the surface of the metal-containing film using a plasma formed from a first processing gas, the first processing gas including a gas containing silicon, carbon or metal; and (c) removing at least a portion of the side face of the metal-containing film using a plasma formed from a second processing gas.


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