The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Sep. 20, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Heng Wu, Guilderland, NY (US);

Alexander Reznicek, Troy, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract

A semiconductor structure includes a bottom MTJ stack with a bottom fixed layer, a bottom barrier layer, and a bottom free layer. The semiconductor structure also includes a top MTJ stack with a top fixed layer, a top barrier layer, and a top free layer. Additionally, the semiconductor structure also includes a spin-Hall effect (SHE) rail with a dielectric, a top heavy metal layer, and a bottom heavy metal layer.


Find Patent Forward Citations

Wu, Heng. (2026). Stacked spin-orbit torque magnetoresistive random access memory (U.S. Patent No. 12635419). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12635419

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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