The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Dec. 03, 2021
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Chun-Chen Yeh, Danbury, CT (US);
Heng Wu, Guilderland, NY (US);
Alexander Reznicek, Troy, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Fork sheet FET devices with airgap isolation are provided. In one aspect, a fork sheet FET device includes: at least a first nanosheet FET and a second nanosheet FET; and a dielectric pillar disposed directly between the first nanosheet FET and the second nanosheet FET, wherein the dielectric pillar includes an airgap. For instance, the first nanosheet FET and the second nanosheet FET can have nanosheets that extend horizontally on opposite sides of the dielectric pillar. A method of forming a fork sheet FET device having airgap isolation is also provided.