The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Jan. 11, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chin-Ta Chen, Hsinchu City, TW;

Han-Wei Wu, Tainan City, TW;

Yuan-Hsiang Lung, Hsinchu City, TW;

Hua-Tai Lin, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H01L 21/308 (2006.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H01L 21/3086 (2013.01); H10D 84/0158 (2025.01); H10D 84/834 (2025.01);
Abstract

A first group of semiconductor fins are over a first region of a substrate, the substrate includes a first stepped profile between two of the first group of semiconductor fins, and the first stepped profile comprises a first lower step, two first upper steps, and two first step rises extending from opposite sides of the first lower step to the first upper steps. A second group of semiconductor fins are over a second region of the substrate, the substrate includes a second stepped profile between two of the second group of semiconductor fins, and the second stepped profile comprises a second lower step, two second upper steps, and two second step rises extending from opposite sides of the second lower step to the second upper steps, in which the second upper steps are wider than the first upper steps in the cross-sectional view.


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