The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Dec. 27, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Linchun Wu, Wuhan, CN;
Kun Zhang, Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A method for fabricating a three-dimensional memory includes forming a first stack substrate on a substrate. The method also includes forming bottom select gate cuts through the first stack structure, and forming first sacrificial layers within the bottom select gate cuts. The method further includes forming a second stack structure covering the first sacrificial layers and the first stack structure. Both the first stack structure and the second stack structure include alternately stacked dielectric layers and gate sacrificial layers. The method further includes replacing the first sacrificial layers with first conductive layers, and replacing the gate sacrificial layers with gate conductive layers. The method further includes forming trenches exposing the first conductive layers on the side of the first stack structure far away from the second stack structure. The method further includes replacing the first conductive layers with insulating layers via the trenches.