The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Nov. 28, 2023
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventor:

Yi-Hung Li, Hsinchu County, TW;

Assignee:

EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 20/25 (2023.01); G11C 17/16 (2006.01);
U.S. Cl.
CPC ...
H10B 20/25 (2023.02); G11C 17/165 (2013.01);
Abstract

An antifuse-type non-volatile memory cell includes a select transistor, a following transistor and a capacitor. The first drain/source terminal of the select transistor is connected with a bit line. The gate terminal of the select transistor is connected with a word line. A first drain/source terminal of the following transistor is connected with a second drain/source terminal of the select transistor. A gate terminal of the following transistor is connected with a following line. A second drain/source terminal of the following transistor is connected with a first terminal of the capacitor. A second terminal of the capacitor is connected with an antifuse control line.


Find Patent Forward Citations

Quick Actions:

Li, Yi-Hung. (2026). Antifuse-type non-volatile memory cell (U.S. Patent No. 12635132). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12635132

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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