The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Sep. 16, 2024
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventors:

Pascal Kamel Abouda, Saint Lys, FR;

Patrice Besse, Tournefeuille, FR;

Alain Salles, Pechbusque, FR;

Olivier Tico, St Lys, FR;

Evgueniy Nikolov Stefanov, Vieille Toulouse, FR;

Khalil Jradi, Donneville, FR;

Arlette Marty-Blavier, Seysses, FR;

Assignee:

NXP USA, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/08 (2006.01); H03K 17/0812 (2006.01); H10D 89/60 (2025.01); H10D 8/25 (2025.01);
U.S. Cl.
CPC ...
H03K 17/08122 (2013.01); H10D 89/611 (2025.01); H10D 8/25 (2025.01);
Abstract

A switch arrangement comprising: a bi-directional metal-oxide-semiconductor, MOS, switch having a drain, source and gate and a body; a first circuit coupled between the drain, the gate and the source for providing electrostatic discharge protection; a first transistor having a source coupled to the body of the MOS switch, a drain coupled to the source of the MOS switch and a gate coupled to the gate of the MOS switch; and a second circuit for providing electrostatic discharge protection comprising a first diode of Zener diode type having an anode coupled to the body of the MOS switch and a cathode coupled to the source, and a second transistor having a source coupled to the body of the MOS switch, a drain coupled to the source of the MOS switch and a gate coupled to the anode of the first diode.


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