The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Jun. 27, 2022
Applicants:

Tokyo Electron Limited, Tokyo, JP;

Tokyo Institute of Technology, Tokyo, JP;

Inventors:

Shin Oowada, Tokyo, JP;

Tatsuya Yamaguchi, Yamanashi, JP;

Ryuichi Asako, Yamanashi, JP;

Takanori Fukushima, Tokyo, JP;

Yoshiaki Shoji, Tokyo, JP;

Takashi Kajitani, Tokyo, JP;

Hibiki Ogiwara, Tokyo, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09D 7/63 (2018.01); C07C 43/21 (2006.01); C07F 7/18 (2006.01);
U.S. Cl.
CPC ...
C09D 7/63 (2018.01); C07C 43/21 (2013.01); C07F 7/1804 (2013.01); C07C 2603/90 (2017.05);
Abstract

A pattern forming method includes forming a pattern film on a substrate. The pattern film includes a triptycene derivative having a triptycene skeleton. The triptycene skeleton includes a first plane in which position 1, position 8, and position 13 of the triptycene skeleton are arranged, and a second plane in which position 4, position 5, and position 16 of the triptycene skeleton are arranged. The triptycene derivative includes a first side chain on a one plane side, the one plane side being on a side of one plane from among the first plane and the second plane, and a second side chain on another plane side or on the one plane side, the another plane side being on a side of another plane from among the first plane and the second plane. The second side chain is different from the first side chain in an etching selectivity ratio.


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