The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Aug. 05, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yun Ju Fan, Hsinchu, TW;
Huan-Chieh Su, Hsinchu, TW;
Chun-Yuan Chen, Hsinchu, TW;
Cheng-Chi Chuang, Hsinchu, TW;
Chih-Hao Wang, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H10D 30/67 (2025.01); H10D 84/01 (2025.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H10D 84/0149 (2025.01); H10D 84/0151 (2025.01); H10D 30/6735 (2025.01);
Abstract
A device includes a stack of semiconductor nanostructures, a gate structure wrapping around the semiconductor nanostructures, a source/drain region abutting the gate structure and the stack, a contact structure on the source/drain region, a backside dielectric layer under the stack, and a via structure extending from the contact structure to a top surface of the backside dielectric layer.