The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Sep. 11, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
PO-Hsien Cheng, Hsinchu, TW;
Tai-Chun Huang, Hsinchu, TW;
Chung-Ting Ko, Hsinchu, TW;
Chia-Yu Fang, Hsinchu, TW;
Sung-En Lin, Hsinchu, TW;
Yu-Yun Peng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for filling a gap includes: filling a dielectric layer in the gap so that a seam is formed in the dielectric layer, the dielectric layer including two surface portions at two opposite sides of the seam, respectively; introducing a surface modification agent into the seam such that each of the two surface portions has first functional groups and second functional groups; forming a stress layer on the dielectric layer to cover the seam, the stress layer including a material different from that of the dielectric layer; and applying an energy field to permit the two surface portions to bond with each other through reaction between the first functional groups and the second functional groups.