The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
May. 17, 2022
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Wei-Fu Wang, Hsin-Chu County, TW;
Yi-Chao Wang, Hsinchu, TW;
Li-Ting Wang, Hsinchu, TW;
Yee-Chia Yeo, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Abstract
An intensity of a power laser beam applied to a semiconductor device is adjusted. An applied intensity of the power laser beam is indicative of a magnitude at which the power laser beam is emitted toward the semiconductor device and a reflection intensity of a probing laser beam applied to the semiconductor device is indicative of an emissivity of the semiconductor device. The reflection intensity of the probing laser beam is measured to determine the emissivity of the semiconductor device and the applied intensity of the power laser beam is adjusted as a function of the emissivity.