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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12628605 B1

PDFFull Text
Date of Patent:
May. 12, 2026

Filed:

Sep. 09, 2020

Substrate processing apparatus

Applicant:

Wonik Ips Co., Ltd., Pyeongtaek-si, KR;

Inventors:

Seung Seob Lee, Seoul, KR;

Jeong Lim Son, Sejong-si, KR;

Joo Ho Kim, Seoul, KR;

Kyung Park, Seoul, KR;

Joo Suop Kim, Hwaseong-si, KR;

Young Jun Kim, Pyeongtaek-si, KR;

Byung Jo Kim, Pyeongtaek-si, KR;

Assignee:

WONIK IPS CO., LTD., Pyeongtaek-si, KR;

Attorney:

WILLIAM PARK AND ASSOCIATES LTD.

Primary Examiner:

Parviz Hassanzadeh

Assistant Examiner:

Nathan K Ford

Int. Cl.
CPC ...
C23C 16/44 (2006.01); B05B 1/32 (2006.01); H10P 72/00 (2026.01); B05B 11/00 (2023.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); H10P 72/10 (2026.01); H10P 72/30 (2026.01);
U.S. Cl.
CPC ...
H10P 72/0431 (2026.01); C23C 16/4412 (2013.01); H10P 72/0402 (2026.01); B05B 1/323 (2013.01); B05B 11/0037 (2013.01); B05B 11/0039 (2018.08); C23C 16/34 (2013.01); C23C 16/455 (2013.01); C23C 16/4584 (2013.01); H10P 72/0602 (2026.01); H10P 72/12 (2026.01); H10P 72/3312 (2026.01);
Abstract

The present invention relates to a substrate processing apparatus, and more particularly, the substrate processing apparatus includes a gas utility exhausting each of the reaction space and the protective space so that a pressure change process including a high-pressure process, which is in a state of a pressure higher than atmospheric pressure, and a low-pressure process that is in a state of a pressure lower than the atmospheric pressure, is performed on a plurality of substrates introduced into the reaction space.

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