The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
May. 19, 2023
Tokyo Electron Limited, Tokyo, JP;
Takahiro Yonezawa, Miyagi, JP;
Yusuke Takino, Miyagi, JP;
Kenta Ono, Miyagi, JP;
Tetsuya Nishizuka, Miyagi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma processing method according to the present disclosure is performed with a plasma processing apparatus, and includes: (a) preparing a substrate on a substrate support in the chamber, the substrate having an etching target film including a first silicon-containing film, and a first metal-containing film on the etching target film, the first metal-containing film including an opening pattern; and (b) etching the etching target film. (b) includes supplying a processing gas including one or more gases containing carbon, hydrogen, and fluorine into the chamber to form a plasma from the processing gas within the chamber and etch the first silicon-containing film to form the opening pattern in the first silicon-containing film, and a ratio of the number of hydrogen atoms to the number of fluorine atoms in the processing gas is 0.3 or more.