The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Dec. 13, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Akitaka Shimizu, Nirasaki City, JP;

Masaki Hosono, Nirasaki City, JP;

Kaname Satou, Nirasaki City, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01L 21/31116 (2013.01); H01L 21/67069 (2013.01);
Abstract

An etching method of etching Si or SiN existing on a substrate, includes: forming an oxide film on a surface of Si or SiN by performing a radical oxidation process on the substrate having Si or SiN; performing a gas-based chemical process on the oxide film; and removing reaction products produced by the gas-based chemical process, wherein the forming the oxide film, the performing the gas-based chemical process, and the removing the reaction products are repeated a plurality of times.


Find Patent Forward Citations

Shimizu, Akitaka. (2026). Etching method including steps of an oxidation process, a gas based chemical process, and removal of chemical products (U.S. Patent No. 12628586). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12628586

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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