The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Sep. 20, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Juntao Li, Cohoes, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Julien Frougier, Albany, NY (US);

Nicolas Jean Loubet, Guilderland, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/6757 (2025.01); H10D 62/115 (2025.01);
Abstract

A semiconductor structure comprises a first nanosheet stack comprising one or more first nanosheet channel layers and a first dielectric isolation layer over the one or more first nanosheet channel layers, a second nanosheet stack comprising one or more second nanosheet channel layers and a second dielectric isolation layer over the one or more second nanosheet channel layers, and a gate dielectric layer disposed over a top surface of one of the first dielectric isolation layer and the second dielectric isolation layer.


Find Patent Forward Citations

Li, Juntao. (2026). Nanosheet stacks with dielectric isolation layers (U.S. Patent No. 12628390). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12628390

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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