The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Jul. 17, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Wei Liu, Wuhan, CN;

Hongbin Zhu, Wuhan, CN;

Yanhong Wang, Wuhan, CN;

Zichen Liu, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/0383 (2023.02); H10B 12/50 (2023.02);
Abstract

A semiconductor device and methods for forming the same are provided. The method includes: forming a plurality of first trenches having a first width during forming a plurality of grooves having a second width less than the first width, each of the plurality of first trenches and the plurality of grooves extending laterally along a first lateral direction and vertically in an upper portion of a semiconductor layer, the plurality of first trenches and the plurality of grooves being alternatively arranged along a second lateral direction different from the first lateral direction; forming a spacer in each groove, where the spacer is laterally extending along the first lateral direction; and forming two disconnected conductive structures in each first trench, the disconnected conductive structures laterally extending in parallel along the first lateral direction.


Find Patent Forward Citations

Loading…