Semiconductor structure including memory signal transmission line in backside redistribution

Abstract

A semiconductor structure includes a substrate, a data storage element, and first and second bit line sets. The substrate has a front side and a backside and includes a substrate layer, a first active layer, and a second active layer. The second active layer is proximal to the front side. The substrate layer is proximal to the backside. The data storage element extends across the first and second active layers. The first bit line set includes a first bit line and a first complementary bit line. At least one of the first bit line and the first complementary bit line is disposed on the front side of the substrate. The second bit line set includes a second bit line and a second complementary bit line. At least one of the second bit line and the second complementary bit line is disposed on the backside of the substrate.