The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Apr. 12, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Hsien-Wei Chen, Hsinchu City, TW;

Meng-Liang Lin, Hsinchu, TW;

Shin-Puu Jeng, Po-Shan Village, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/16 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/16 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/563 (2013.01); H01L 21/568 (2013.01); H01L 23/3185 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 24/16 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/19103 (2013.01); H01L 2924/351 (2013.01);
Abstract

An embodiment semiconductor package assembly may include an interposer, an integrated passive device electrically coupled to a first side of the interposer, an underfill material portion formed between the integrated passive device and the first side of the interposer, and a dam protruding from the first side of the interposer and configured to constrain a spatial extent of the underfill material portion. The dam may include a first portion extending above a surface of the first side of the interposer and a second portion embedded below the surface of the first side of the interposer. The dam may be formed in a dielectric layer that also includes a component of a redistribution interconnect structure. The dam may further be electrically isolated from the redistribution interconnect structure and may be configured to form a connected or disconnected boundary of a two-dimensional region of the first side of the interposer.


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