The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Jun. 02, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Wei Liu, Wuhan, CN;

Hongbin Zhu, Wuhan, CN;

Wenyu Hua, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10B 63/10 (2023.01);
U.S. Cl.
CPC ...
H10B 12/50 (2023.02); H10B 12/05 (2023.02); H10B 12/482 (2023.02); H10B 12/485 (2023.02); H10B 63/10 (2023.02);
Abstract

A memory device includes a memory cell and a peripheral circuit. The memory cell includes a vertical transistor having a first terminal and a second terminal, a storage unit having a first end coupled to the first terminal of the vertical transistor, and a bit line coupled to the second terminal of the vertical transistor. The peripheral circuit is coupled to the bit line. The vertical transistor includes a semiconductor body extending in a first direction, and a gate structure coupled to at least one side of the semiconductor body. The bit line is disposed between the vertical transistor and the peripheral circuit along the first direction.


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