The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 05, 2026

Filed:

Dec. 08, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Yu-Hao Tsai, Albany, NY (US);

Du Zhang, Albany, NY (US);

Peter Biolsi, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/04 (2006.01); C23C 16/02 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45534 (2013.01); C23C 16/0254 (2013.01); C23C 16/04 (2013.01); C23C 16/34 (2013.01); C23C 16/342 (2013.01); C23C 16/405 (2013.01); H01J 37/32357 (2013.01); H01J 2237/338 (2013.01);
Abstract

A method for selectively depositing a mask protection material using non-plasma treatments includes performing a non-plasma vapor treatment and performing a non-plasma halide treatment. During the non-plasma vapor treatment, a mask having openings exposing an underlying layer is treated with a non-plasma vapor to selectively deposit a first component of a mask protection material on the mask. During the non-plasma halide treatment, the mask and the underlying layer are treated with a non-plasma halide gas to selectively deposit a second component of the mask protection material on the mask. The non-plasma treatments are performed sequentially, but may be performed in either order. An optional pretreatment may be performed prior to the non-plasma treatments during which the mask is pretreated to form a reactive surface.


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